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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12772556 B1

PDFFull Text
Date of Patent:
Oct. 20, 2026

Filed:

Oct. 16, 2023

3d-stacked semiconductor device manufactured using channel spacer

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seungchan Yun, Waterford, NY (US);

Jaejik Baek, Watervliet, NY (US);

Kang-Ill Seo, Springfield, VA (US);

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Ismail A Muse

Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01); H10D 88/01 (2025.01);
Abstract

Provided is a three-dimension (3D) stacked semiconductor device which includes: a 1source/drain region connected to a 1channel structure; and a 2source/drain region, above the 1source/drain region, connected to a 2channel structure above the 1channel structure, wherein the 2channel structure has a smaller length than the 1channel structure in a channel-length direction, in which the 2source/drain region is connected to a 3source/drain region through the 2channel structure.

Find Patent Forward Citations

Yun, Seungchan. (2026). 3d-stacked semiconductor device manufactured using channel spacer (U.S. Patent No. 12772556). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772556

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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