The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jun. 28, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Hsiang Wang, Hsinchu, TW;
Szu-Lin Liu, Hsinchu City, TW;
Jaw-Juinn Horng, Hsinchu, TW;
Yung-Chow Peng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of manufacturing an integrated circuit (IC) device includes forming a metal oxide semiconductor (MOS) transistor including a first gate and first and second source/drain (S/D) regions, the first and second S/D regions having a first doping type and being formed in a substrate region having a second doping type different from the first doping type, forming a guard ring structure surrounding the MOS transistor, the guard ring structure including a second gate and first and second heavily doped regions, the first and second heavily doped regions being formed in the substrate region and having the second doping type, and constructing a first electrical connection between the first and second gates.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile