The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Oct. 20, 2022
United Microelectronics Corp., Hsin-Chu City, TW;
Chun-Hao Lin, Kaohsiung City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A semiconductor structure includes a semiconductor substrate, a first gate structure, and a first spacer structure. The semiconductor substrate includes a first active structure, and the first gate structure is disposed on the first active structure. The first gate structure includes a first gate oxide layer and a first high dielectric constant (high-k) dielectric layer. The first gate oxide layer includes a U-shaped structure in a cross-sectional view of the first gate structure, and the first high-k dielectric layer is disposed on the first gate oxide layer The first spacer structure is disposed on a sidewall of the first gate structure, and a first portion of the gate oxide layer is located between the first spacer structure and the first high-k dielectric layer in a horizontal direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile