Integrated circuit device including a field-effect transistor having a semiconductor epitaxial structure and method of manufacturing the same

Abstract

An integrated circuit device includes: a rear wiring structure; an insulating substrate including fin structures disposed on the rear wiring structure and extending in a first horizontal direction; a device isolation layer disposed between the fin structures; a lower insulating layer covering the fin structures; gate structures extending in a second horizontal direction crossing the first horizontal direction; a plurality of nanosheet stacks disposed on the lower insulating layer; a first source/drain region disposed on the insulating substrate and including a body portion and a vertical extension portion, wherein the body portion is disposed between the plurality of nanosheet stacks, and the vertical extension portion passes through the lower insulating layer and through some of the fin structures; a semiconductor epitaxial structure at least partially surrounding the vertical extension portion of the first source/drain region; and a lower contact connecting the semiconductor epitaxial structure with the rear wiring structure.