The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Mar. 22, 2023
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Hayato Nakano, Kofu-city, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H10D 8/00 (2025.01); H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10W 72/00 (2026.01); H10W 72/30 (2026.01); H10W 72/60 (2026.01); H10W 72/90 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10D 62/127 (2025.01); H10D 8/00 (2025.01); H10D 12/481 (2025.01); H10W 72/352 (2026.01); H10W 72/622 (2026.01); H10W 72/634 (2026.01); H10W 72/646 (2026.01); H10W 72/652 (2026.01); H10W 72/655 (2026.01); H10W 72/886 (2026.01); H10W 72/952 (2026.01); H10W 90/734 (2026.01); H10W 90/761 (2026.01);
Abstract

Provided is a semiconductor device including: a transistor portion provided in a semiconductor substrate; and a diode portion provided in the semiconductor substrate, in which an area ratio of the transistor portion to the diode portion on a front surface of the semiconductor substrate is larger than 3.1 and smaller than 4.7. Provided is a semiconductor module including: a semiconductor device including a transistor portion and a diode portion provided in a semiconductor substrate; an external connection terminal electrically connected to the semiconductor device; and a coupling portion for electrically connecting the semiconductor device and the external connection terminal. The coupling portion may be in plane contact with a front surface electrode of the semiconductor device at a predetermined junction surface. An area ratio of the transistor portion to the diode portion may be larger than 2.8 and smaller than 4.7.


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Quick Actions:

Nakano, Hayato. (2026). Semiconductor device and semiconductor module (U.S. Patent No. 12772515). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772515

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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