Gate all around dual channel transistors

Abstract

Semiconductor devices having gate all around transistors with dual channels, one channel type for p-channel field-effect transistors (pFETs) and another channel type for n-channel field-effect transistors (nFETs) are provided. In one aspect, a semiconductor device includes: a wafer; and at least a first transistor and a second transistor on the wafer, where the first and second transistors each includes multiple channels, and where the multiple channels of the first transistor include first portions and second portions with the first portions having (e.g., Si) cores and a (e.g., SiGe) cladding layer fully surrounding the cores. Alternatively, an anneal can be performed to convert the cores/cladding layer into uniform (e.g., SiGe). A method of fabricating the present semiconductor devices is also provided.