Silicon carbide semiconductor power transistor and method of manufacturing the same

Abstract

A silicon carbide semiconductor power transistor includes a silicon carbide substrate, a first drift layer, a second drift layer on the substrate with V-grooves, buried doped regions in the first drift layer below the V-grooves, gates in the V-grooves, a gate insulation layer, a delta doping layer, a well region, source regions, well pick-up regions, conductive trenches, and doping portions. Each of the buried doped regions is a predetermined distance from a bottom of each of the V-grooves. The delta doping layer is disposed in the second drift layer, and the V-grooves are across the delta doping layer. The conductive trenches are disposed in the second drift layer, and each of the conductive trenches passes through the well pick-up regions and contacts with the well region. The doping portions are respectively on sidewalls of the conductive trenches in the well region.