The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jan. 29, 2024
Mosel Vitelic Inc., Hsinchu, TW;
Mosel Vitelic Inc., Hsinchu, TW;
Abstract
A method for manufacturing an insulated gate bipolar transistor includes (a) providing a substrate comprising a front side and a back side; (b) forming at least one front side element and at least one front side metal layer on the front side of the substrate; (c) performing a thinning process on the back side of the substrate; (d) performing a laser pre-treatment process on the back side of the substrate; (e) performing at least one ion doping process on the back side of the substrate for forming at least one ion doping layer; (f) performing an annealing process on the back side of the substrate; and (g) forming a collector metal layer on the back side of the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile