The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Feb. 09, 2024
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shih-Yu Liao, Hsinchu, TW;
Chung-Liang Cheng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A device includes: a device layer; and an interconnect structure on the device layer, the interconnect structure including a phase change random access memory (PCRAM) device. The PCRAM device includes: an electrode layer above the device layer; an oxide semiconductor layer on the electrode layer; a gate structure that wraps around the oxide semiconductor layer; an insulating layer on the gate structure; and a phase change resistor. The phase change resistor includes: a bottom electrode on the oxide semiconductor layer; a phase change layer on the bottom electrode; and a top electrode on the phase change layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile