Memory cell, three-dimensional memory, and method of operating three-dimensional memory

Abstract

The memory cell includes: an array of channel layers including N channel layers vertically provided on a substrate, a tunneling layer and a memory layer being sequentially provided on an outer side of the channel layers; N thermal conductive cores provided in the N channel layers respectively and penetrating the substrate; and an array of thermocouples including a thermocouple word line layer grown on the substrate and N thermocouple layers on the thermocouple word line layer, the thermocouple layers being connected one-to-one with the thermal conductive cores. A first potential difference is applied between the thermocouple word line layer and the thermocouple layer, and the thermal conductive core connected with the thermocouple layer is heated, so that the channel layer and the memory layer corresponding to the thermal conductive core are maintained at first and second preset temperatures respectively under a thermal insulation effect of the tunneling layer.