The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Oct. 26, 2025
Fabrication methods of 3d semiconductor devices and structures with metal layers and connection path
Monolithic 3d Inc., Allen, TX (US);
Zvi Or-Bach, Haifa, IL;
Deepak C. Sekar, Sunnyvale, CA (US);
Brian Cronquist, New Salisbury, IN (US);
Monolithic 3D Inc., Allen, TX (US);
Abstract
Methods to fabricate a semiconductor device, the method including: forming a first level, the first level including a single crystal silicon layer, a plurality of transistors, and a plurality of first metal layers, where each transistor of the plurality of transistors includes a single crystal channel, and where the plurality of first metal layers include interconnections between the transistors of the plurality of transistors; thinning the single crystal silicon layer to a thickness of less than two microns; forming a second level, the second level including a plurality of second metal layers, where the second level is disposed underneath the first level; and forming a connection path between at least one of the transistors to at least one of the plurality of second metal layers, where the connective path includes at least one via disposed through at least the single crystal silicon layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile