The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Nov. 15, 2021
Beijing Naura Microelectronics Equipment Co., Ltd., Beijing, CN;
BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing, CN;
Abstract
A method for etching a silicon wafer includes: a main etching process using a first mixed gas to perform a plasma etching process to etch the silicon wafer until a pattern on the silicon wafer reaches a specified aspect ratio, the first mixed gas being configured to etch silicon and react with silicon to form non-volatile reaction products; and an auxiliary etching process using a second mixed gas to perform another plasma etching process, the second mixed gas being configured to react with silicon to generate the non-volatile reaction products, and a formation rate of the non-volatile reaction products in the auxiliary etching process being greater than a formation rate of the non-volatile reaction products in the main etching process. The main etching process and the auxiliary etching process are alternately performed at least once until the pattern on the silicon wafer reaches a specified etching depth.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile