The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Mar. 29, 2022
Applicants:

Huawei Technologies Canada Co., Ltd., Kanata, CA;

Dong Seob Chung, Waterloo, CA;

Hany Maher Aziz, Waterloo, CA;

Inventors:

Dong Seob Chung, Waterloo, CA;

Hany Maher Aziz, Oakville, CA;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/115 (2023.01); H10K 71/00 (2023.01); H10K 71/30 (2023.01);
U.S. Cl.
CPC ...
H10K 50/115 (2023.02); H10K 71/00 (2023.02); H10K 71/30 (2023.02);
Abstract

This invention is related to a new treatment process employed during preparation of the ZnO ETL in a QDLED. The treatment involves exposing the ZnO layer to fluorine (F). In embodiments of this invention, the exposure of the ZnO layer to the F is performed using a fluorine plasma environment (e.g., using CF, CHF, CFor SF). Alternatively, the F exposure may be done by exposing the ZnO ETL to a suitable fluorine-containing substance such as fluorine gas or fluorinated solvents. The F plasma treatment of the ZnO improves both QDLED device EQE and EL stability.


Find Patent Forward Citations

Chung, Dong. (2026). Process for the halogen treatment of metal oxide layers (U.S. Patent No. 12765158). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765158

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