The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Sep. 15, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Ruei Jhan, Hsinchu, TW;

Kuan-Ting Pan, Hsinchu, TW;

Shi-Ning Ju, Hsinchu, TW;

Kuo-Cheng Chiang, Hsinchu, TW;

Chih-Hao Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 84/0167 (2025.01); H10D 84/0188 (2025.01); H10D 84/038 (2025.01); H10P 14/3452 (2026.01);
Abstract

A device includes a substrate, a first semiconductor channel over the substrate, a second semiconductor channel over the substrate and laterally offset from the first semiconductor channel, an isolation feature embedded in the substrate and laterally between the first and second semiconductor channels, a first liner layer laterally surrounding the isolation feature between the isolation feature and the first semiconductor channel, and a second liner layer laterally surrounding the first liner layer between the first liner layer and the first semiconductor channel.


Find Patent Forward Citations

Jhan, Yi-Ruei. (2026). Field effect transistor and method (U.S. Patent No. 12765047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765047

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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