The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Jul. 12, 2023
Denso Corporation, Kariya-city, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
Tatsuji Nagaoka, Nisshin, JP;
Hiroki Miyake, Nisshin, JP;
DENSO CORPORATION, Kariya-city, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
Abstract
A semiconductor device includes a semiconductor substrate having an element region and a peripheral region. The semiconductor substrate includes a high-concentration layer, a drift layer, and a low-concentration layer. The high-concentration layer extends from the element region to the peripheral region, and is in contact with a lower electrode. The high-concentration layer has a thin plate portion and a thick plate portion. The drift layer is in contact with the upper surface of the thick plate portion. The low-concentration layer extends from the element region to the peripheral region, and is in contact with an upper surface of the thin plate portion and a side surface of a stepped portion at a boundary between the thin plate portion and the thick plate portion. A half or more of a quadrilateral region in a cross section of the semiconductor substrate is not depleted.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile