The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Dec. 12, 2023
International Business Machines Corporation, Armonk, NY (US);
James P. Mazza, Saratoga Springs, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Shay Reboh, Guilderland, NY (US);
Reinaldo Vega, Mahopac, NY (US);
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
Takashi Ando, Eastchester, NY (US);
David Wolpert, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a first stacked field-effect transistor structure having a first lower field-effect transistor device and a first upper field-effect transistor device. The semiconductor device also includes a second stacked field-effect transistor structure comprising a second lower field-effect transistor device and a second upper field-effect transistor device, where at least one of: the first lower field-effect transistor device includes a different number of channel layers than the second lower field-effect transistor device; and the first upper field-effect transistor device includes a different number of channel layers than the second upper field-effect transistor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile