The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Mar. 30, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventor:

Jhon Jhy Liaw, Zhudong Township, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/115 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

A device includes a stack of first nanostructures, wherein each first nanostructure includes a channel region with a first width; a first gate on the stack of first nanostructures, wherein each first nanostructure is surrounded by the first gate, wherein a distance from a first end of the first gate to an adjacent first nanostructure is a first distance; a stack of second nanostructures, wherein each second nanostructure includes a channel region with a second width greater than the first width; a second gate on the stack of second nanostructures, wherein each second nanostructure is surrounded by the second gate, wherein a second distance from a first end of the second gate to an adjacent second nanostructure is greater than the first distance; and a first isolation structure extending continuously from the first end of the first gate to the first end of the second gate.


Find Patent Forward Citations

Liaw, Jhon. (2026). Semiconductor devices with nanostructures arranged end-to-end (U.S. Patent No. 12765012). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765012

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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