Vertical oriented semiconductor device in which well regions are created in a semiconductor body, and a method of manufacturing the same

Abstract

A vertical oriented semiconductor device is provided. The present disclosure further provides that at least one of the well regions of the device have at least two lateral doping gradients, at different depths in the semiconductor material, and each doping gradient has a monotonic decreasing doping concentration, from a higher doping concentration at a first lateral end of the well regions towards a lower doping concentration at a second, opposite lateral end thereof facing the current-accommodating region. These two doping gradients, at different depths, differ from each other, with one of the advantages being that the semiconductor device is made more robust. Multiple ways of implementing the two different lateral doping gradients are provided. Some of the advantages are that the electric field crowding at the corners of the well regions is gradually reduced, and the current distribution can be improved.