Mosfet including heavy metal to improve reverse recovery characteristics

Abstract

A semiconductor device includes first and second electrodes, a semiconductor part located between the first and second electrodes, a gate electrode located between the semiconductor part and the second electrode, and a structure body extending in the semiconductor part under the gate electrode. The semiconductor part includes first to fifth layers which are stacked in this order. The first to third and fifth layers are of a first conductivity type. The fourth layer is of a second conductivity type. The gate electrode faces the fourth layer. The structure body includes an insulating film, a conductive body, an insulating layer, and a silicide layer. The silicide layer is located at a lower end of the structure body. The lower end of the structure body contacts the second layer. The second layer includes a heavy metal. The third layer has a lower concentration of the heavy metal than the second layer.