The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Mar. 23, 2022
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Kevin M. Frey, Windsor Mill, MD (US);
Ken Nagamatsu, Gaithersburg, MD (US);
Josephine Chang, Ellicott City, MD (US);
Robert S. Howell, Silver Spring, MD (US);
Northrop Grumman Systems Corporation, Virginia, VA;
Abstract
A field effect transistor, comprising: a substrate and a superlattice of stacked conducting channels on the substrate; a source and a drain spaced-apart from each other on the superlattice; alternating castellations and trenches formed in the superlattice between the source and the drain, wherein the castellations have sidewalls that cut-down through the superlattice to form the trenches and edges of the stacked conducting channels that terminate at the sidewalls; a fringe field dielectric that fills lower volumes of the trenches up to a height on the sidewalls that is higher than first edges of first conducting channels among the stacked conducting channels, such that the fringe field dielectric is adjacent to the first edges; and a gate electrode overlaying the fringe field dielectric and the castellations such that the gate electrode is not adjacent to the first edges.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile