Semiconductor structure having a plurality of heterojunction structures stack

Abstract

The present disclosure provides a semiconductor structure including a substrate, an insulation layer on the substrate; a protrusion structure protruding out of the insulation layer, where the protrusion structure includes a source region, a drain region and a channel region between whereof; the protrusion structure includes a first through n-th heterojunction structure sequentially stacked along a direction away from the substrate, where n is an integer greater than or equal to 2; the first heterojunction structure includes a first channel layer and a first barrier layer, and the n-th heterojunction structure includes an n-th channel layer and an n-th barrier layer, and at least one of the first barrier layer, through the n-th barrier layer is doped with an N-type element; the source electrode on the source region, the drain electrode on the drain region, and the gate structure on the channel region.