The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Oct. 25, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jhon-Jhy Liaw, Zhudong Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate, nanostructures, source/drain features, a gate structure, inner spacers, and dielectric layers. The nanostructures are over the substrate and spaced apart from each other in a Z-direction. The source/drain features are attached to the nanostructures in an X-direction. The gate structure wraps around the nanostructures and extends in a Y-direction. The inner spacers are between the nanostructures in the Z-direction. The dielectric layers are under the inner spacers. Bottom surfaces of the dielectric layers are lower than a bottommost surface of the gate structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile