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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12764982 B1

PDFFull Text
Date of Patent:
Oct. 13, 2026

Filed:

May. 10, 2022

Semiconductor device and manufacturing method thereof

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Kaname Mitsuzuka, Matsumoto-city, JP;

Misaki Takahashi, Matsumoto-city, JP;

Tohru Shirakawa, Matsumoto-city, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:

Jay C Kim

Assistant Examiner:

Woo K Lee

Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01); H10D 12/01 (2025.01); H10D 62/13 (2025.01); H10P 30/20 (2026.01); H10P 30/22 (2026.01); H10P 32/10 (2026.01); H10P 32/14 (2026.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01); H10D 12/038 (2025.01); H10D 62/142 (2025.01); H10P 30/204 (2026.01); H10P 30/21 (2026.01); H10P 30/22 (2026.01); H10P 32/1406 (2026.01); H10P 32/171 (2026.01);
Abstract

To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion. The semiconductor device having a transistor portion and a diode portion, the semiconductor device includes: a drift region of a first conductivity type provided on a semiconductor substrate, a first well region of a second conductivity type provided on an upper surface side of the semiconductor substrate, an anode region of the second conductivity provided on the upper surface side of the semiconductor substrate, in the diode portion, and a first high concentration region of a second conductivity type which is provided in contact with a first well region between the anode region and the first well region, and has a higher doping concentration than the anode region.

Find Patent Forward Citations

Mitsuzuka, Kaname. (2026). Semiconductor device and manufacturing method thereof (U.S. Patent No. 12764982). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12764982

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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