The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Sep. 19, 2023
Applicant:

Winbond Electronics Corp., Taichung City, TW;

Inventor:

Chang-Hung Lin, Chiayi City, TW;

Assignee:

WINBOND ELECTRONICS CORP., Taichung City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 64/66 (2025.01); H10W 10/00 (2026.01); H10W 10/20 (2026.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H10B 12/053 (2023.02); H10D 64/01326 (2026.01); H10D 64/513 (2025.01); H10D 64/679 (2025.01); H10W 10/021 (2026.01); H10W 10/20 (2026.01);
Abstract

A method for forming a semiconductor structure is provided. The method includes: forming a trench in a semiconductor substrate; forming a gate lining layer along a lower portion of the trench; filling a gate electrode layer over the gate lining layer in the lower portion of the trench; forming a first sacrificial layer along a sidewall of an upper portion of the trench; forming a barrier layer along a sidewall of the first sacrificial layer and over a top surface of the gate electrode layer; removing a first portion of the barrier layer along the sidewall of the first sacrificial layer, thereby leaving a second portion of the barrier layer over the top surface of the gate electrode layer; forming a semiconductor layer over the second portion of the barrier layer; removing the first sacrificial layer; and forming a capping layer over the semiconductor layer.


Find Patent Forward Citations

Lin, Chang-Hung. (2026). Method for forming semiconductor device (U.S. Patent No. 12764937). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12764937

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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