Transistor, manufacturing method thereof, and memory

Abstract

A transistor includes: a substrate including an active area; a gate structure penetrating through the active area and including a gate and a gate dielectric layer, in which the gate dielectric layer covers sidewalls and a bottom of the gate; a channel layer located on a side of the gate dielectric layer away from the gate, in which the channel layer includes a metal oxide semiconductor layer, in which the active area includes a first active layer and a second active layer located at two sides of the gate structure, and the first active layer and the second active layer are in contact with the channel layer.