The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Dec. 15, 2023
Micron Technology, Inc., Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Scott E. Sills, Boise, ID (US);
Si-Woo Lee, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Systems, methods and apparatus are provided for a hybrid gate dielectric access device for vertical three-dimensional (3D) memory. The memory cell has a first horizontally oriented access device having a first source/drain region and a second source/drain region separated by a first channel region. The first access device is operatively controlled by a first gate. A hybrid gate dielectric separates the gate from the channel region and a horizontally oriented storage node coupled to the second source/drain region of the access device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile