The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Jun. 27, 2022
Changxin Memory Technologies, Inc., Hefei City, CN;
Jinghao Wang, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei City, CN;
Abstract
A semiconductor structure and a method for forming semiconductor structure are provided. The method includes: after a plurality of capacitor vias are formed in a support layer and a sacrifice layer, external electrode layers are formed on sidewall surfaces of the capacitor vias; a dielectric layer is formed on a sidewall surface of each external electrode layer; remaining sacrifice layer between the external electrode layers is removed to form a cavity at a position where remaining sacrifice layer has been removed; an internal electrode layer is formed on a surface of the dielectric layer and a bottom surface of each capacitor via; a first conductive layer completely filling the cavity is formed, where the first conductive layer is in contact with a respective one of the external electrode layers; and a second conductive layer completely filling a remaining part of each capacitor via is formed on the internal electrode layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile