The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Jul. 26, 2024
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Hsin-Yu Lai, Hsinchu, TW;
Katherine H. Chiang, New Taipei City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A capacitor structure includes a first electrode, a second electrode, a dielectric layer between the first electrode and the second electrode, a first oxygen donor layer between the dielectric layer and the first electrode, a second oxygen donor layer between the dielectric layer and the second electrode, a first conductive layer between the first oxygen donor layer and the dielectric layer, and a second conductive layer between the second oxygen donor layer and the dielectric layer. An oxygen concentration of the first oxygen donor layer increases. An oxygen concentration of the second oxygen donor layer increases. A metal atom of the first electrode and a metal atom of the second electrode are different from a metal atom of the first oxygen donor layer and different from a metal atom of the second oxygen donor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile