The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Nov. 07, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/063 (2023.01); G11C 11/22 (2006.01); G11C 11/54 (2006.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
G06N 3/063 (2013.01); G11C 11/223 (2013.01); G11C 11/2255 (2013.01); G11C 11/2257 (2013.01); G11C 11/54 (2013.01); H10B 51/20 (2023.02); H10B 51/30 (2023.02);
Abstract
A ferroelectric memory device may include a source, a drain, a channel layer between the source and the drain and connected to the source and the drain, a first gate electrode and a second gate electrode located on the channel layer to be spaced apart from each other, and a ferroelectric layer between the channel layer and the first gate electrode and between the channel layer and the second gate electrode. Different voltages may be applied to the first gate electrode and the second gate electrode.
Nam, Seunggeol. (2026). Ferroelectric memory device and electronic device including the same (U.S. Patent No. 12762388). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12762388
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile