The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Apr. 04, 2025
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Phong Sy Nguyen, Livermore, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/108 (2013.01); G06F 11/1096 (2013.01);
Abstract
Various example embodiments provide for dynamic error correction with redundant array of independent NAND-type memory devices (RAIN) protection for a memory system, such as a memory sub-system. In particular, various example embodiments provide one or more different solutions for implementing concurrent use of dynamic exclusively OR (dynamicXOR) protection and RAIN protection on a memory device while avoiding the challenges/conflicts suffered by conventional memory systems.
Nguyen, Phong. (2026). Dynamic error correction protection with rain protection for memory system (U.S. Patent No. 12762016). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12762016
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile