The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Aug. 29, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Juane Li, Milpitas, CA (US);

Wenchi Hong, Taichung City, TW;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1076 (2013.01);
Abstract

Various example embodiments provide for early use of a redundant array of independent NAND-type memory devices-based (RAIN-based) error recovery technique in a read error handling (REH) process of a memory system to recover stored data. For some example embodiments, the RAIN-based error recovery technique is configured to determine, based on a system parameter, if and when the RAIN-based error recovery technique should be performed (e.g., triggered) at an alternative stage (e.g., at another position in the sequence) that is earlier than its current stage.


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Li, Juane. (2026). Early use of rain in read error handling process (U.S. Patent No. 12762015). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12762015

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