The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Sep. 17, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yew Shen Teo, Singapore, SG;

Wai Leong Chin, Singapore, SG;

Jiejuan Liu, Singapore, SG;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0655 (2013.01); G06F 3/0604 (2013.01); G06F 3/0679 (2013.01);
Abstract

This disclosure is directed to a memory device that intelligently applies an additional read offset when reading memory blocks. The memory device receives a request to read a portion from a memory device and computes a read threshold voltage for reading data from the portion of the memory device. The memory device determines whether the portion is associated with a pseudo-folding event and, in response to determining whether the portion is associated with the pseudo folding event, selectively applies an additional read offset to the read threshold voltage to read the data from the portion of the memory device.


Find Patent Forward Citations

Teo, Yew. (2026). Adjusting read threshold voltage using cov offset (U.S. Patent No. 12761829). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12761829

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…