The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Nov. 18, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); C09D 183/04 (2006.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C09D 183/04 (2013.01); H10P 76/2041 (2026.01);
Abstract
A method of manufacturing a semiconductor device includes forming a photoresist underlayer over a semiconductor substrate. The underlayer includes a polymer having a photocleavable functional group. A photoresist layer is formed over the underlayer. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed to form a photoresist pattern.
Ho, Chun-Chih. (2026). Underlayer composition and method of manufacturing a semiconductor device (U.S. Patent No. 12761562). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12761562
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile