The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Dec. 22, 2020
Applicant:
SK Siltron Co., Ltd., Gyeongsangbuk-do, KR;
Inventor:
Woo Tae Kim, Gyeongsangbuk-do, KR;
Assignee:
SK SILTRON CO., LTD., Gumi-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01); C30B 15/02 (2006.01); C30B 15/14 (2006.01); C30B 15/30 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/20 (2013.01); C30B 15/02 (2013.01); C30B 15/14 (2013.01); C30B 15/30 (2013.01); C30B 29/06 (2013.01);
Abstract
An embodiment provides a method for growing silicon single crystal ingots, comprising the steps of: (a) injecting polysilicon into a crucible inside a chamber; (b) melting the polysilicon in the crucible to form a silicon melt; (c) measuring the degree of melting of the polysilicon; and (d) increasing, after a predetermined part of the polysilicon has been melted, the supply amount of an inert gas supplied to the chamber, and decreasing the pressure inside the chamber.
Kim, Woo. (2026). Method and apparatus for growing silicon single crystal ingots (U.S. Patent No. 12760440). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12760440
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile