The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
May. 31, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
Yu-Chun Chen, Kaohsiung City, TW;
Yu-Ping Wang, Hsinchu City, TW;
I-Ming Tseng, Kaohsiung City, TW;
Yi-An Shih, Changhua County, TW;
Chung-Sung Chiang, Kaohsiung City, TW;
Chiu-Jung Chiu, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A method for fabricating a semiconductor device includes the steps of first bonding a top wafer to a bottom wafer, in which the top wafer has a first metal interconnection including a first barrier layer exposing from a bottom surface of the top wafer. Next, a dielectric layer is formed on the bottom surface of the top wafer and then a second metal interconnection is formed in the dielectric layer and connected to the first metal interconnection, in which the second metal interconnection includes a second barrier layer and the first barrier layer and the second barrier layer include a H-shape altogether.