The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Sep. 29, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Brent A. Anderson, Jericho, VT (US);
Albert M. Chu, Nashua, NH (US);
Ruilong Xie, Niskayuna, NY (US);
Junli Wang, Slingerlands, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10D 30/63 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10W 20/427 (2026.01); H10D 30/63 (2025.01); H10D 64/252 (2025.01);
Abstract
A first VTFET is provided on a wafer. A second VTFET is adjacent to the first VTFET on the wafer. A backside power deliver network is on a backside of the wafer. A shared frontside contact is on a frontside of the wafer. The shared frontside contact is connected to a first top source/drain region of the first VTFET, a second top source/drain region of the second VTFET, and the backside power delivery network.