The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Apr. 24, 2024
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Albert M. Chu, Nashua, NH (US);
Reinaldo Vega, Mahopac, NY (US);
Lawrence Alfred Clevenger, Saratoga Springs, NY (US);
Brent A. Anderson, Jericho, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/00 (2026.01); H10W 20/43 (2026.01);
U.S. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/082 (2026.01); H10W 20/084 (2026.01); H10W 20/089 (2026.01); H10W 20/43 (2026.01);
Abstract
A semiconductor device includes a through layer skip via that traverses an intermediary metal layer. The through layer skip via has a damascene metal portion and a subtractive metal portion. A dielectric spacer is disposed within a thickness of the intermediary metal layer and surrounds a top portion of the subtractive metal portion.