The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Oct. 31, 2023
Applicant:

Nanya Technology Corporation, New Taipei City, TW;

Inventor:

Ping Hsu, New Taipei City, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/20 (2026.01); H10W 20/00 (2026.01); H10W 90/00 (2026.01); H10W 80/00 (2026.01); H10W 90/20 (2026.01);
U.S. Cl.
CPC ...
H10W 20/211 (2026.01); H10W 20/023 (2026.01); H10W 20/035 (2026.01); H10W 20/075 (2026.01); H10W 20/20 (2026.01); H10W 20/213 (2026.01); H10W 90/00 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/297 (2026.01); H10W 90/792 (2026.01);
Abstract

The present application discloses a semiconductor device and a method for fabricating the same. The semiconductor device includes a first substrate including a front side and a back side; a first passivation layer over the front side; a second passivation layer over the back side and having a top surface; a conductive feature in the first passivation layer; a through substrate via (TSV) penetrating through the second passivation layer and the first substrate and electrically coupled to the conductive feature; and a polymer liner between the TSV and the first substrate, wherein the polymer liner has a top surface lower than the top surface of the second passivation layer; a barrier layer between the second passivation layer and the TSV, between the polymer liner and the TSV, and between the interconnect structure and the TSV; and an adhesion layer between the barrier layer and the TSV.


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