The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Apr. 18, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hung-Ju Li, Hsinchu City, TW;
Yu-Wei Ting, Taipei City, TW;
Tsung-Hao Yeh, Hsinchu City, TW;
Kuo-Pin Chang, Zhubei City, TW;
Kuo-Ching Huang, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Device structures and methods for forming the same are provided. A semiconductor structure according to the present disclosure includes a first electrode and a second electrode disposed over a substrate, a heating element disposed over the substrate, a phase-change material layer disposed over the substrate, and an insulator disposed vertically between the heating element and the phase-change material layer. The phase-change material layer includes at least a first segment and a second segment separated from the first segment. Each of the first and second segments overlaps the heating element in a top view. Each of the first and second segments is electrically connected with both the first and second electrodes.