The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Aug. 01, 2023
Applicant:

Stmicroelectronics International N.v., Geneva, CH;

Inventors:

Andrea Redaelli, Milan, IT;

Luca Laurin, Lissone, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H10B 63/30 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/8828 (2023.02); G11C 2213/79 (2013.01);
Abstract

An in-memory computation (IMC) system includes an in-memory computation circuit formed by a first phase change memory (PCM) array configured to store the computational weights for an in-memory computation operation. A data storage circuit is formed by a second PCM array configured to store backup data for the computational weights for the in-memory computation operation. The first PCM array includes PCM cells made of a phase change material provided by a first GST alloy, and the second PCM array includes PCM cells made of a phase change material provided by a second GST alloy different from the first GST alloy. A control circuit operates to read the backup data from the second PCM array and write to the first PCM array to refresh the computational weights for the in-memory computation operation from the backup data.


Find Patent Forward Citations

Redaelli, Andrea. (2026). Process for cointegration of two phase change memory (pcm) arrays having different phase change materials, and in-memory computation system utilizing the two pcm arrays (U.S. Patent No. 12757642). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757642

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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