The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Aug. 25, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd, Hsinchu, TW;

Inventors:

Hsiang-Lin Chen, Hsinchu, TW;

Yi-Shin Chu, Hsinchu, TW;

Cheng-Yu Huang, Hsinchu, TW;

Wei-Chieh Chiang, Yuanlin, TW;

Dun-Nian Yaung, Wunshan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); G02B 1/00 (2006.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/184 (2025.01); G02B 1/002 (2013.01); H10F 39/024 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/811 (2025.01);
Abstract

A semiconductor device, and method of fabricating the same, includes a first substrate, the first substrate including at least one visible light photosensor disposed between a first side and a second side of the first substrate, a second substrate including an infrared light photosensor disposed between a second side of the second substrate and a first side of the second substrate, and a metalens disposed between the visible light photosensor and the infrared light photosensor, the metalens configured to focus infrared light impinging on a surface of the first substrate onto the infrared light photosensor.


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