The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Dec. 13, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Tao Li, Slingerlands, NY (US);
Nicholas Alexander Polomoff, Hopewell Junction, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A first backside power rail directly below and connected to a first source-drain epitaxy region of a positive field effect transistor (p-FET) region via a first backside contact vertically aligned with the first source-drain epitaxy region, the first backside power rail directly contacts an upper horizontal surface of the first backside contact and the first backside power rail directly contacts a vertical side surface of the first backside contact. Forming a first backside power rail directly below and connected to a first source-drain epitaxy region of a positive field effect transistor (p-FET) region via a first backside contact vertically aligned with the first source-drain epitaxy region, where the first backside power rail directly contacts an upper horizontal surface of the first backside contact and the first backside power rail directly contacts a vertical side surface of the first backside contact.