logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12757485 B1

PDFFull Text
Date of Patent:
Oct. 06, 2026

Filed:

Nov. 28, 2023

3d-stacked semiconductor device including middle isolation structure and bspdn structure

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Keumseok Park, Slingerlands, NY (US);

Seungchan Yun, Waterford, NY (US);

Kang-Ill Seo, Springfield, VA (US);

Assignee:

SAMSUNG ELECTRONICS CO., LTD., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Bo B Jang

Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 88/00 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/0188 (2025.01); H10D 84/038 (2025.01); H10D 88/01 (2025.01); H10W 20/427 (2026.01);
Abstract

Provided is a semiconductor device which includes: a 1source/drain region connected to a 1channel structure which is controlled by a 1gate structure; a 2source/drain region, above the 1source/drain region, connected to a 2channel structure which is controlled by a 2gate structure; and a middle isolation structure between the 1gate structure and the 2gate structure, wherein the middle isolation structure comprises two or more vertically-stacked semiconductor layers.

Find Patent Forward Citations

Quick Actions:

Park, Keumseok. (2026). 3d-stacked semiconductor device including middle isolation structure and bspdn structure (U.S. Patent No. 12757485). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757485

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…