The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Nov. 27, 2023
International Business Machines Corporation, Armonk, NY (US);
Anna Lin, Cranbury, NJ (US);
Gopal Sankar Kenath, Troy, NY (US);
Tao Li, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the present invention are directed to processing methods and resulting structures for providing wrap-around backside source/drain contacts through a wafer backside. In a non-limiting embodiment, a first field effect transistor and a second filed effect transistor are formed. The first field effect transistor includes a first source or drain (S/D) region, a second S/D region, and a backside contact. The backside contact includes a lower portion and a wrap-around portion wrapping around a lower portion of the second S/D region. The second field effect transistor includes a frontside contact on a S/D region and a backside sacrificial region below the S/D region.