The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jul. 11, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Minsu Seol, Suwon-si, KR;
Junyoung Kwon, Suwon-si, KR;
Keunwook Shin, Suwon-si, KR;
Minseok Yoo, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/80 (2025.01); H10D 30/43 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/40 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 62/80 (2025.01); H10D 30/43 (2025.01); H10D 30/6212 (2025.01); H10D 30/6757 (2025.01); H10D 99/00 (2025.01); H10D 62/40 (2025.01);
Abstract
A semiconductor device may include a two-dimensional material layer including a two-dimensional semiconductor material having a polycrystalline structure; metallic nanoparticles partially on the two-dimensional material layer; a source electrode and a drain electrode respectively on both sides of the two-dimensional material layer; and a gate insulating layer and a gate electrode on the two-dimensional material layer between the source electrode and the drain electrode.