The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jan. 10, 2024
Applicant:
Zeno Semiconductor, Inc., Sunnyvale, CA (US);
Inventors:
Jin-Woo Han, San Jose, CA (US);
Yuniarto Widjaja, Cupertino, CA (US);
Zvi Or-Bach, San Jose, CA (US);
Dinesh Maheshwari, Fremont, CA (US);
Assignee:
Zeno Semiconductor, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); G11C 11/404 (2006.01); G11C 13/00 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); H03K 19/0948 (2006.01); H10B 63/00 (2023.01); H10D 30/60 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 86/00 (2025.01); H10D 89/00 (2026.01); H10W 10/00 (2026.01); H10W 10/30 (2026.01); H03K 19/20 (2006.01); H03K 19/21 (2006.01); H10D 30/68 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/53 (2025.01); H10P 30/20 (2026.01);
U.S. Cl.
CPC ...
H10D 62/378 (2025.01); G11C 11/404 (2013.01); G11C 16/04 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); H10B 63/30 (2023.02); H10D 30/60 (2025.01); H10D 30/62 (2025.01); H10D 30/6733 (2025.01); H10D 30/6734 (2025.01); H10D 30/6758 (2025.01); H10D 62/151 (2025.01); H10D 62/292 (2025.01); H10D 62/371 (2025.01); H10D 62/393 (2025.01); H10D 64/512 (2025.01); H10D 84/0191 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01); H10D 84/853 (2025.01); H10D 86/201 (2025.01); H10D 86/215 (2025.01); H10D 89/213 (2025.01); H10W 10/031 (2026.01); H10W 10/30 (2026.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 16/0408 (2013.01); G11C 16/0466 (2013.01); G11C 2213/79 (2013.01); H03K 19/0948 (2013.01); H03K 19/20 (2013.01); H03K 19/21 (2013.01); H10D 30/681 (2025.01); H10D 30/6892 (2025.01); H10D 30/69 (2025.01); H10D 30/696 (2025.01); H10D 62/115 (2025.01); H10D 62/53 (2025.01); H10D 64/519 (2025.01); H10P 30/204 (2026.01); H10P 30/21 (2026.01);
Abstract
A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.