The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Oct. 17, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Ren Chen, Taoyuan City, TW;
Shih-Hsun Chang, Hsinchu, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure is provided. The method includes forming a source/drain feature over an active region, forming a gate stack across the active region, forming an interlayer dielectric layer over the source/drain feature, and etching the interlayer dielectric layer to form an opening exposing the source/drain feature. The opening has a first sidewall extending in a first horizontal direction and a second sidewall extending in a second horizontal direction. The method also includes forming a contact liner along the opening, and forming a contact plug in the opening. A first portion of the contact liner along the first sidewall of the opening is thinner than a second portion of the contact liner along the second sidewall of the opening.