The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2026

Filed:

Jul. 13, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chiao-Chun Hsu, Hsinchu City, TW;

Chu Fu Chen, Zhubei City, TW;

Ting-Yu Chen, Hsinchu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/10 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01); H10D 64/64 (2025.01);
U.S. Cl.
CPC ...
H10D 30/675 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 30/6738 (2025.01); H10D 62/106 (2025.01); H10D 62/85 (2025.01); H10D 62/8503 (2025.01); H10D 64/01 (2025.01); H10D 64/64 (2025.01);
Abstract

Some embodiments relate to an integrated device, including a semiconductor film accommodating a two-dimensional carrier gas (2DCG) over a substrate; a first source/drain electrode over the semiconductor film; a second source/drain electrode over the semiconductor film; a semiconductor capping structure between the first source/drain electrode and the second source/drain electrode; a first gate overlying the semiconductor capping structure and between the first source/drain electrode and the second source/drain electrode in a first direction; a first helping gate overlying the semiconductor capping structure and bordering the first gate, wherein the first helping gate and the second source/drain electrode are arranged in a line extending in a second direction transverse to the first direction.


Find Patent Forward Citations

Hsu, Chiao-Chun. (2026). High electron mobility transistor with helping gate (U.S. Patent No. 12757447). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757447

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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