The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Oct. 16, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
Pin-Tseng Chen, Kaohsiung City, TW;
Ling-Chun Chou, Tainan City, TW;
Kun-Hsien Lee, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
The invention provides a metal oxide semiconductor (MOS) capacitor structure, which includes a counter-doping region in the channel region directly below the gate. Between the deep ion well and the counter-doping region is a semiconductor region. The doping concentration of the semiconductor region is lower than that of the deep ion well. The P-type well ion implantation processes in the active region of the device can be omitted, so the production cost is lower, and the dosage of the counter-doping region can be reduced, which improves the time-dependent dielectric collapse (TDDB) issue.