The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
May. 31, 2023
Micron Technology, Inc., Boise, ID (US);
Giorgio Servalli, Fara Gera d'Adda (BG), IT;
Marcello Mariani, Milan, IT;
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for a ferroelectric memory architecture are described. A memory architecture may include a gap region between memory cells to reduce a capacitance between plates coupled with the memory cells. The gap region may include a fluid, such as air, which may have a relatively low dielectric constant to reduce a capacitance between plates and reduce (e.g., eliminate) undesirable coupling between plates during memory operations. Implementing the gap region between memory cells enables a memory device to increase speed and reduce resource consumption associated with memory operations.